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parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) 61 i d @ t c = 100c continuous drain current, v gs @ 10v (see fig.9) 43 a i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) 30 i dm pulsed drain current 240 p d @t c = 25c power dissipation 120 w linear derating factor 0.77 w/c v gs gate-to-source voltage 16 v e as single pulse avalanche energy 200 mj e as (6 sigma) single pulse avalanche energy tested value 600 i ar avalanche current see fig.12a, 12b, 15, 16 a e ar repetitive avalanche energy mj t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c IRLR3915PBF irlu3915pbf hexfet ? power mosfet absolute maximum ratings parameter typ. max. units r jc junction-to-case ??? 1.3 r ja junction-to-ambient (pcb mount) ??? 50 c/w r ja junction-to-ambient??? 110 thermal resistance v dss = 55v r ds(on) = 14m ? i d = 30a www.irf.com 1 automotive mosfet pd - 95090a hexfet(r) is a registered trademark of international rectifier. description specifically designed for automotive applications, this hexfet? power mosfet utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. additional features of this product are a 175c junction operating temperature, fast switching speed and improved repetitive avalanche rating. these features com- bine to make this design an extremely efficient and reliable device for use in automotive applications and a wide variety of other applications. s d g features advanced process technology ultra low on-resistance 175c operating temperature fast switching repetitive avalanche allowed up to tjmax d-pak IRLR3915PBF i-pak irlu3915pbf lead-free

2 www.irf.com parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c, i s = 30a, v gs = 0v t rr reverse recovery time ??? 62 93 ns t j = 25c, i f = 30a, v dd = 25xjkl v q rr reverse recovery charge ??? 110 170 nc di/dt = 100a/s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 55 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.057 ??? v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? 12 14 v gs = 10v, i d = 30a ??? 14 17 v gs = 5.0v, i d = 26a v gs(th) gate threshold voltage 1.0 ??? 3.0 v v ds = 10v, i d = 250a g fs forward transconductance 42 ??? ??? s v ds = 25v, i d = 30a ??? ??? 20 a v ds = 55v, v gs = 0v ??? ??? 250 v ds = 55v, v gs = 0v, t j = 125c gate-to-source forward leakage ??? ??? 200 v gs = 16v gate-to-source reverse leakage ??? ??? -200 na v gs = -16v q g total gate charge ??? 61 92 i d = 30a q gs gate-to-source charge ??? 9.0 14 nc v ds = 44v q gd gate-to-drain ("miller") charge ??? 17 25 v gs = 10v t d(on) turn-on delay time ??? 7.4 ??? v dd = 28v t r rise time ??? 51 ??? i d = 30a t d(off) turn-off delay time ??? 83 ??? r g = 8.5 ? t f fall time ??? 100 ??? v gs = 10v between lead, ??? ??? nh 6mm (0.25in.) from package and center of die contact c iss input capacitance ??? 1870 ??? v gs = 0v c oss output capacitance ??? 390 ??? v ds = 25v c rss reverse transfer capacitance ??? 74 ??? pf ? = 1.0mhz, see fig. 5 c oss output capacitance ??? 2380 ??? v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance ??? 290 ??? v gs = 0v, v ds = 44v, ? = 1.0mhz c oss eff. effective output capacitance ??? 540 ??? v gs = 0v, v ds = 0v to 44v electrical characteristics @ t j = 25c (unless otherwise specified) l d internal drain inductance l s internal source inductance ??? ??? s d g i gss ns 4.5 7.5 i dss drain-to-source leakage current s d g source-drain ratings and characteristics 61 240 m ?

www.irf.com 3 fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 0.001 0.01 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.0v 20s pulse width tj = 25c vgs top 15v 10v 5.0v 3.0v 2.7v 2.5v 2.25v bottom 2.0v 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.0v 20s pulse width tj = 175c vgs top 15v 10v 5.0v 3.0v 2.7v 2.5v 2.25v bottom 2.0v 1.0 3.0 5.0 7.0 9.0 11.0 13.0 15.0 v gs , gate-to-source voltage (v) 0.10 1.00 10.00 100.00 1000.00 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 175c v ds = 25v 20s pulse width fig 4. typical forward transconductance vs. drain current 0 102030405060 i d ,drain-to-source current (a) 0 10 20 30 40 50 60 70 g f s , f o r w a r d t r a n s c o n d u c t a n c e ( s ) t j = 25c t j = 175c

4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 10 20 30 40 50 60 70 0 2 4 6 8 10 12 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 30a v = 11v ds v = 27v ds v = 44v ds 0.1 1 10 100 1000 0.0 0.5 1.0 1.5 2.0 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 175 c j t = 25 c j 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec

www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 t , case temperature ( c) i , drain current (a) c d limited by package 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) fig 10. normalized on-resistance vs. temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 61a

6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as fig 14. threshold voltage vs. temperature r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs 25 50 75 100 125 150 175 0 100 200 300 400 500 starting tj, junction temperature ( c) e , single pulse avalanche energy (mj) as i d top bottom 12a 21a 30a -75 -50 -25 0 25 50 75 100 125 150 175 200 t j , temperature ( c ) 0.5 1.0 1.5 2.0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a

www.irf.com 7 fig 15. typical avalanche current vs.pulsewidth fig 16. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 15, 16: (for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 12a, 12b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 15, 16). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figure 11) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av 1.0e-08 1.0e-07 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav assuming ? tj = 25c due to avalanche losses 0.01 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 20 40 60 80 100 120 140 160 180 200 220 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 10% duty cycle i d = 30a

8 www.irf.com fig 17.

for n-channel hexfet power mosfets
?
? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period
+ - + + + - - - ?
?
!"!! ?

# $$ ? !"!!%" v ds 90% 10% v gs t d(on) t r t d(off) t f &' 1 (
# 0.1 % + - fig 18a. switching time test circuit fig 18b. switching time waveforms

www.irf.com 9

12 in the assembly line "a" as s embled on ww 16, 1999 example: with assembly this is an irfr120 lot code 1234 year 9 = 1999 dat e code we e k 16 part number logo international rectifier assembly lot code 916a irfu120 34 year 9 = 1999 dat e code or p = de s i gn at e s l e ad- f r e e product (opt ional) note: "p" in as sembly line pos ition i ndicates "l ead- f r ee" 12 34 week 16 a = assembly site code part number irf u120 line a logo lot code assembly int ernat ional rect if ier

10 www.irf.com

assembly example: with assembly this is an irfu120 year 9 = 1999 dat e code line a week 19 in the assembly line "a" as s embled on ww 19, 1999 lot code 5678 part number 56 irf u120 international logo rectifier lot code 919a 78 note: "p" in assembly line position indicates "lead-free" 56 78 assembly lot code rect ifier logo int ernat ional irfu120 part number we e k 19 dat e code year 9 = 1999 a = assembly site code p = de s i gn at e s l e ad- f r e e product (optional)

www.irf.com 11 data and specifications subject to change without notice. this product has been designed and qualified for the automotive [q101] market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 12/04 repetitive rating; pulse width limited by max. junction temperature. (see fig. 11). limited by t jmax , starting t j = 25c, l = 0.45mh, r g = 25 ? , i as = 30a, v gs =10v. part not recommended for use above this value. i sd 30a, di/dt 280a/s, v dd v (br)dss , t j 175c. pulse width 1.0ms; duty cycle 2%.
c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . limited by t jmax , see fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. this value determined from sample failure population. 100% tested to this value in production. when mounted on 1" square pcb ( fr-4 or g-10 material ). for recommended footprint and soldering techniques refer to application note #an-994.

tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch

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